400kV 가속기 (Ion Implantation & MEIS) 이미지

400kV 가속기 (Ion Implantation & MEIS)

Model
HVEE
Location
가속기연구동 (L19) 1004호
Tel
02-958-5094

400 kV Accelerator is consist of ion beam analysis such as Medium Energy Ion Scattering (MEIS) and ion implantation. MEIS eliminates the influence of the substrate through channeling, and thin film thickness, composition ratio and diffusion analysis is possible at nm level. Ion implantation is possible for almost all elements in the periodic table, but for ions not listed in the table, a preliminary experiment is required for beam extraction. https://blog.naver.com/wclim1

Specifications

  • [MEIS Specifications]

  • Range of elements: Li ~ U

  • Detection limits: 0.1~10 at%(low Z) 1~100ppm(high Z)

  • Depth resolution: 0.5 nm

  • Maximum depth: 10 ~ 30 nm

  • [Ion Implantation Specifications]

  • Range of elements: H ~ U

  • Range of Energy: 50 ~ 400 keV

  • Dose: ~ 1E+17 atoms/cm2

  • Temperature: -196 (LN2) ~ 800 oC

Applications

  • MEIS

  • - Thin film analysis: thickness, composition ratio, and diffusion

  • Ion Implantation

  • - Modification of magnetic, optical, and electrical properties

Application examples

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400kV 가속기 (Ion Implantation & MEIS)

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